著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Nitric acid oxidation of silicon at 〜 120℃ to form 3.5-nm SiO_2/Si structure with good electrical characteristics,Applied Physics Letters 85,,,2004,,,3783-3785,https://cir.nii.ac.jp/crid/1010000781591474176,