著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Real-time observation of initial oxdation on highly B-doped Si(100)-2xl surfaces using scanning tunneling microscopy,Proc.of the 25th International conference on the Physics of Semiconductors,,,2001,,,329-330,https://cir.nii.ac.jp/crid/1010000781757703040,