{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1010000781758162060.json","@type":"Article","resourceType":"学術雑誌論文(journal article)","dc:title":[{"@language":"ja","@value":"Effects of GaN Substrates on InA1GaN Quaternary UV LEDs"}],"publication":{"prism:publicationName":[{"@language":"ja","@value":"Phys. Stat. Sol.(a) 201, 12"}],"prism:publicationDate":"2004","prism:startingPage":"2624","prism:endingPage":"2627"},"project":[{"@id":"https://cir.nii.ac.jp/crid/1040000781758161920","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"13355001"},{"@type":"JGN","@value":"JP13355001"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355001/"}],"notation":[{"@language":"ja","@value":"交互供給コドーピング法による高濃度P型窒化物半導体薄膜結晶の製作とその応用"},{"@language":"en","@value":"Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications"}]}],"dataSourceIdentifier":[{"@type":"KAKEN","@value":"PRODUCT-17465138"}]}