著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
中島 安理,Atomic-layer-deposited silicon-nitride/SiO_2 stack - a highly potential gate dielectrics for advanced CMOS technology (Introductory Invited),Microelectronics Reliability 42,,,2002,,,1823-1835,https://cir.nii.ac.jp/crid/1010000781759534728,