A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
書誌事項
- タイトル
- A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation
- 著者
- A.Katakami
収録刊行物
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- Jpn.J.Appl.Phys. 43-4B
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Jpn.J.Appl.Phys. 43-4B 2145-2150, 2004
