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Quantitative evaluation of Si/SiO2 interface using high-angle annular dark field scanning transmission electron microscopy
Bibliographic Information
- Title
- Quantitative evaluation of Si/SiO2 interface using high-angle annular dark field scanning transmission electron microscopy
- Author
- N.Nakanishi et al.
- Published
- 2004
- Resource Type
- journal article
Journal
-
- Phys.Rev. B70
-
Phys.Rev. B70 2004
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Details 詳細情報について
-
- CRID
- 1010000781812559499
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
