著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Epitaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_<1-x>Sr_xSi_2 Films on Si(111) by Molecular Beam Epitaxy,"Japanese Journal of Applied Physics Vol.43, No.6B",,,2004,,,,https://cir.nii.ac.jp/crid/1010000781818312578,