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On the Origin of Increase in Substrate Current and Impact Ionization Efficiency in Strained Si n- and p-MOSFETs
Bibliographic Information
- Title
- On the Origin of Increase in Substrate Current and Impact Ionization Efficiency in Strained Si n- and p-MOSFETs
- Author
- T.Irisawa, T.Numata, N.Sugiyama, S.Takagi
- Published
- 2005
- Resource Type
- journal article
Journal
-
- IEEE Transaction on Electron Devices Vol.52, Issue.5
-
IEEE Transaction on Electron Devices Vol.52, Issue.5 993-998, 2005
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Details 詳細情報について
-
- CRID
- 1010000781870670866
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
