{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1010000781874569617.json","@type":"Article","resourceType":"学術雑誌論文(journal article)","dc:title":[{"@language":"ja","@value":"High Gain and High Sesitive Blue-Ultraviolet Avalanche Photodiodes Of ZnSSe n+-i-p Structure MBE Grownon p-type GaAs substrates"}],"publication":{"prism:publicationName":[{"@language":"ja","@value":"Jpn.J.Appl.Phys.Express Letter 44"}],"prism:publicationDate":"2005","prism:startingPage":"508","prism:endingPage":"510"},"project":[{"@id":"https://cir.nii.ac.jp/crid/1040000781874569472","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"16360008"},{"@type":"JGN","@value":"JP16360008"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-16360008/"}],"notation":[{"@language":"ja","@value":"II-VI,III-V族ワイドバンドギャップ半導体発光デバイスの劣化機構解明と制御"},{"@language":"en","@value":"Study of degradation mechanism and its control on II-VI, III-V wide bandgap light emitting device"}]}],"dataSourceIdentifier":[{"@type":"KAKEN","@value":"PRODUCT-18694763"}]}