著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,"Design and fabrication of RESURF MOSFETs on 4H-SiC(0001), (11-20), and 6H-SiC(0001)",IEEE Trans.Electron Devices 52,,,2005,,,112-117,https://cir.nii.ac.jp/crid/1010000781874864024,