{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1010000781934008202.json","@type":"Article","resourceType":"学術雑誌論文(journal article)","dc:title":[{"@language":"ja","@value":"Microstructural characterization of 3C-SiC wafer for device application"}],"publication":{"prism:publicationName":[{"@language":"ja","@value":"Abstracts of Spring Meeting of Japan Institute of Metals"}],"prism:publicationDate":"2007","prism:startingPage":"397"},"project":[{"@id":"https://cir.nii.ac.jp/crid/1040000781934008192","@type":"Project","projectIdentifier":[{"@type":"KAKEN","@value":"17360338"},{"@type":"JGN","@value":"JP17360338"},{"@type":"URI","@value":"https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360338/"}],"notation":[{"@language":"ja","@value":"炭化ケイ素単結晶基板における欠陥形成機構の解明と欠陥密度低減方法の開発"},{"@language":"en","@value":"Defect structure analysis and recluction of defects in SiC single aystal substrate"}]}],"dataSourceIdentifier":[{"@type":"KAKEN","@value":"PRODUCT-18952484"}]}