著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,"Fabrication of Pt/Sr_2(Ta_<1-x>, Nb_x)_2O_7/IrO_2/SiO_2/Si Device with Large Memory Window and Metal- Ferroelectric- Metal-Insulator-Si Field-Effect Transistor","Japanese journal of Applied Physics Vol. 45, No. 9B",,,2006,,,7336-7340,https://cir.nii.ac.jp/crid/1010000781948824833,