[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device

Bibliographic Information

Title
Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
Author
Ichirou Takahashi, Tadahiro Ohmi, et al.

Journal

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Details

  • CRID
    1010000781948824836
  • Article Type
    journal article
  • Data Source
    • KAKEN

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