Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
書誌事項
- タイトル
- Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device
- 著者
- Ichirou Takahashi, Tadahiro Ohmi, et al.
収録刊行物
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- Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials
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Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 554-555, 2006
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詳細情報
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- CRID
- 1010000781948824836
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- 資料種別
- journal article
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- データソース種別
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- KAKEN