著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Technology of Ferroelectric Thin Film Formation with Large Memory Window for Future Scaling Down of Ferroelectric Gate FET Memory Device,Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials,,,2006,,,554-555,https://cir.nii.ac.jp/crid/1010000781948824836,