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Analysis of Minority Carrier Diffusion Length in SiC toward High Quality Epitaxial Growth
Bibliographic Information
- Title
- Analysis of Minority Carrier Diffusion Length in SiC toward High Quality Epitaxial Growth
- Author
- T. Hatayama, H. Yano, Y. Uraoka, Takashi, Fuyuki
- Published
- 2006
- Resource Type
- journal article
Journal
-
- J. Microelect. Eng Vol. 83
-
J. Microelect. Eng Vol. 83 30-33, 2006
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Details 詳細情報について
-
- CRID
- 1010000781981953679
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
