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Time-domain component analysis of heavy-ion-induced transient-currents in fully-depleted SOi MOSFETs
Bibliographic Information
- Title
- Time-domain component analysis of heavy-ion-induced transient-currents in fully-depleted SOi MOSFETs
- Author
- D.Kobayashi et al.
- Published
- 2006
- Resource Type
- journal article
Journal
-
- Proc. 7th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA)
-
Proc. 7th Int. Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA) 99-102, 2006
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Details 詳細情報について
-
- CRID
- 1010000781982007830
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
