Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation
Bibliographic Information
- Title
- Very Low Bit Error Rate in Flash Memory Using Tunnel Dielectrics Formed by Kr/O_2/NO Plasma Oxynitridation
- Author
- Tomoyuki Suwa
Journal
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- Japanese Journal of Applied Physics 46
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Japanese Journal of Applied Physics 46 2148-2152, 2007
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Details 詳細情報について
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- CRID
- 1010000781991018496
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- Article Type
- journal article
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- Data Source
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- KAKEN
