Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique
書誌事項
- タイトル
- Evidence for existence of deep acceptor levels in SiGe-on-insulator substrate fabricated using Ge condensation technique
- 著者
- H.Yang, D.Wang, H.Nakashima
収録刊行物
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- Applied Physics Letters Vol.95, No.12
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Applied Physics Letters Vol.95, No.12 2009
