Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 to 285 K

Bibliographic Information

Title
Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 to 285 K
Author
M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen, A. Fujiwara
Published
2011
Resource Type
journal article

Journal

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Details 詳細情報について

  • CRID
    1010000782029559685
  • Article Type
    journal article
  • Data Source
    • KAKEN

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