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Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 to 285 K
Bibliographic Information
- Title
- Carrier transport in indium-doped p-channel silicon-on-insulator transistors doped with indium between 30 to 285 K
- Author
- M. A. H. Khalafalla, Y. Ono, J. Noborisaka, G. P. Lansbergen, A. Fujiwara
- Published
- 2011
- Resource Type
- journal article
Journal
-
- J. Appl. Phys
-
J. Appl. Phys Vol.110, No.19 2011
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Details 詳細情報について
-
- CRID
- 1010000782029559685
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
