High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE
書誌事項
- タイトル
- High Sensitive Ultraviole PIN Photodiodes of ZnSSe n+-i-p Structure p+-GaAs with extremely thin n+-Window layer grown by MBE
- 著者
- K.Miki、Y.Oshita、K.Ando, etal.
収録刊行物
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- J.Korean Phys.Society 53
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J.Korean Phys.Society 53 2925-2928, 2009