著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature,IEEE Trans. Electron Devices,,,2012,Vol.59,,269-276,https://cir.nii.ac.jp/crid/1010000782065859584,