[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Bibliographic Information

Title
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Author
T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Journal

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Details

  • CRID
    1010000782065859589
  • Article Type
    journal article
  • Data Source
    • KAKEN

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