著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process,Solid-StateElectron,,,2011,Vol.68,,68-72,https://cir.nii.ac.jp/crid/1010000782065859589,