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Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique
Bibliographic Information
- Title
- Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique
- Author
- H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
- Published
- 2011
- Resource Type
- journal article
Journal
-
- Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials
-
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials 20-21, 2011
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Details 詳細情報について
-
- CRID
- 1010000782070734337
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN
