Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique

Bibliographic Information

Title
Estimation of breakdown electric-field strength while reflecting local structures of SiO_2 gate dielectrics using first-principles molecular orbital calculation technique
Author
H. Seki, Y. Shibuya, D. Kobayashi, H. Nohira, K. Yasuoka, and K. Hirose
Published
2011
Resource Type
journal article

Journal

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Details 詳細情報について

  • CRID
    1010000782070734337
  • Article Type
    journal article
  • Data Source
    • KAKEN

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