著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Reduction of threading dislocations in GaN on in-situ metlback-etched Si substrates,J.Crystal Growth Vol.315,,,2011,,,196-199,https://cir.nii.ac.jp/crid/1010000782095532288,