著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology,Jpn. J. Appl. Phys.,,,2012,51,,,https://cir.nii.ac.jp/crid/1010000782138811138,