On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
書誌事項
- タイトル
- On the Interface Flattening Effect and Gate Insulator Breakdown Characteristic of Radical Reaction Based Insulator Formation Technology
- 著者
- R. Kuroda, A. Teramoto, X. Li, T. Suwa, S. Sugawa, and T. Ohmi
収録刊行物
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- Jpn. J. Appl. Phys.
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Jpn. J. Appl. Phys. 51 2012