[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

High Drain Current Density E-Mode Al_2O_3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4×10^<8> V^<2>Ω^<-1>cm^<-2>)

Bibliographic Information

Title
High Drain Current Density E-Mode Al_2O_3/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit (4×10^<8> V^<2>Ω^<-1>cm^<-2>)
Author
J. J. Freedsman, T. Kubo, T. Egawa

Journal

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Details

  • CRID
    1010000782150500736
  • Article Type
    journal article
  • Data Source
    • KAKEN

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