Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport
Bibliographic Information
- Title
- Comparisons of Performance Potentials of Si and InAs Nanowire MOSFETs under Ballistic Transport
- Author
- TAKIGUCHI Naoya+;KOBA Shunsuke+;TSUCHIYA Hideaki;OGAWA Matsuto
Journal
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- IEEE Trans. on Electron Devices,
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IEEE Trans. on Electron Devices, Vol. 59, No. 1 206-211, 2012
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Details
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- CRID
- 1010000782221056661
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- Article Type
- journal article
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- Data Source
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- KAKEN
