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Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method
Open Access
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- Tsuchiya Toshiaki
- 島根大学
-
- 小野 行徳
- 富山大学
Bibliographic Information
- Title
- Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method
- Author
- Toshiaki Tsuchiya, Yukinori Ono
- Published
- 2015
- Resource Type
- journal article
Journal
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- Jpn. J. Appl. Phys.
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Jpn. J. Appl. Phys. 54(4S) 2015
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Details 詳細情報について
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- CRID
- 1010000782287140759
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- Article Type
- journal article
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- Data Source
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- KAKEN
