[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

Bibliographic Information

Title
Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
Author
Manato Deki, Takahiro Makino, Kazutoshi Kojima, Takuro Tomita and Takeshi Ohshima

Journal

Related Projects

See more

Details

  • CRID
    1010000782438033540
  • Article Type
    journal article
  • Data Source
    • KAKEN

Report a problem

Back to top