著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses,Materials Science Forum,,,2014,778-780,,440-443,https://cir.nii.ac.jp/crid/1010000782438033540,