Impact of Improved High-Performance Si(110)- Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
書誌事項
- タイトル
- Impact of Improved High-Performance Si(110)- Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
- 著者
- Weitao CHENG
収録刊行物
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- Japanese Journal of Applied Physics 45・4B
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Japanese Journal of Applied Physics 45・4B 3110-3116, 2006