著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Impact of Improved High-Performance Si(110)- Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices,Japanese Journal of Applied Physics 45・4B,,,2006,,,3110-3116,https://cir.nii.ac.jp/crid/1010000782440312460,