Impact of Improved High-Performance Si(110)- Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
Bibliographic Information
- Title
- Impact of Improved High-Performance Si(110)- Oriented Metal-Oxide-Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices
- Author
- Weitao CHENG
Journal
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- Japanese Journal of Applied Physics 45・4B
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Japanese Journal of Applied Physics 45・4B 3110-3116, 2006
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Details 詳細情報について
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- CRID
- 1010000782440312460
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- Article Type
- journal article
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- Data Source
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- KAKEN