著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Dose designing and fabrication of 4H-SiC double RESURF MOSFETs,Proc. 18th Int. Symp. On Power Semiconductor Devices,,,2006,,,273-276,https://cir.nii.ac.jp/crid/1010000782443214366,