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Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors withl Sisesquioxane Gate Insulators
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- NAGASE Takashi
- 大阪府立大学
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- KOBAYASHI Kobayashi Takashi
- 大阪府立大学
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- NAITO Naito Hiroyoshi
- Osaka Prefecture University
Bibliographic Information
- Title
- Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors withl Sisesquioxane Gate Insulators
- Author
- Kenji Tbmatsu, Takashi Hamada, Takashi Nagase, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito
- Published
- 2008
- Resource Type
- journal article
Journal
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- Japanese Journal of Applied Physics 47
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Japanese Journal of Applied Physics 47 3196-3199, 2008
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Details 詳細情報について
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- CRID
- 1010000782447025280
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- Article Type
- journal article
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- Data Source
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- KAKEN
