Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors withl Sisesquioxane Gate Insulators
書誌事項
- タイトル
- Fabrication and Characterization of Poly(3-hexylthiophene)-Based Field-Effect Transistors withl Sisesquioxane Gate Insulators
- 著者
- Kenji Tbmatsu, Takashi Hamada, Takashi Nagase, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito
- 公開日
- 2008
- 資源種別
- journal article
収録刊行物
-
- Japanese Journal of Applied Physics 47
-
Japanese Journal of Applied Physics 47 3196-3199, 2008
