[Updated on Apr. 18] Integration of CiNii Articles into CiNii Research

Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Bibliographic Information

Title
Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
Author
P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi

Journal

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Details

  • CRID
    1010000782465629317
  • Article Type
    journal article
  • Data Source
    • KAKEN

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