Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
書誌事項
- タイトル
- Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
- 著者
- P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi
収録刊行物
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- J.Vac.Sci.Technol.B Vol. 27, No. 1
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J.Vac.Sci.Technol.B Vol. 27, No. 1 394-401, 2009