Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
Bibliographic Information
- Title
- Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
- Author
- P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi
Journal
-
- J.Vac.Sci.Technol.B Vol. 27, No. 1
-
J.Vac.Sci.Technol.B Vol. 27, No. 1 394-401, 2009
- Tweet
Details
-
- CRID
- 1010000782465629317
-
- Article Type
- journal article
-
- Data Source
-
- KAKEN