著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers,"J.Vac.Sci.Technol.B Vol. 27, No. 1",,,2009,,,394-401,https://cir.nii.ac.jp/crid/1010000782465629317,