Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
Bibliographic Information
- Title
- Different mechanism to explain the 1/f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
- Author
- P. Gaubert, A. Teramoto, W. Cheng, T. Hamada, T. Ohmi
Journal
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- J.Vac.Sci.Technol.B Vol. 27, No. 1
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J.Vac.Sci.Technol.B Vol. 27, No. 1 394-401, 2009
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Details 詳細情報について
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- CRID
- 1010000782465629317
-
- Article Type
- journal article
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- Data Source
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- KAKEN