Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer
書誌事項
- タイトル
- Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer
- 著者
- Hiroshi Nohira, Yoshinori Takenaga, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui and Hiroshi Iwai,
収録刊行物
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- Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16
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Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16 171-176, 2008