Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer
Bibliographic Information
- Title
- Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer
- Author
- Hiroshi Nohira, Yoshinori Takenaga, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui and Hiroshi Iwai,
Journal
-
- Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16
-
Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16 171-176, 2008
