著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer,"Electrochemical Society Inc., Hawai, ECS Transactions Vol. 16",,,2008,,,171-176,https://cir.nii.ac.jp/crid/1010000782474974848,