Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy
書誌事項
- タイトル
- Characteristics of high Al-content AlGaN/AlN quantum wells fabricated by modified migration enhanced epitaxy
- 著者
- R.G.Banal, M.Funato, Y.Kawakami
収録刊行物
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- Physica.Status solidi (C)
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Physica.Status solidi (C) 7 2111-2114, 2010