Depth Profiles of the Fermi Level at an Amorphous-Carbon Nitride/SiO_2/n-type-Si Heterojunction Interface Obtained by Kelvin Probe Force Microscopy
書誌事項
- タイトル
- Depth Profiles of the Fermi Level at an Amorphous-Carbon Nitride/SiO_2/n-type-Si Heterojunction Interface Obtained by Kelvin Probe Force Microscopy
- 著者
- Takahiro Ishizaki, Nagahiro Saito, Riichiro Ohta, Osamu Takai
収録刊行物
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- Diamond and Related Materials 15 (9)
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Diamond and Related Materials 15 (9) 1378-1382, 2006