著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Depth Profiles of the Fermi Level at an Amorphous-Carbon Nitride/SiO_2/n-type-Si Heterojunction Interface Obtained by Kelvin Probe Force Microscopy,Diamond and Related Materials 15 (9),,,2006,,,1378-1382,https://cir.nii.ac.jp/crid/1010282256582653186,