著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
石川 靖彦,Potential-well-roughness-induced transition from resonant tunneling to single-electron tunneling in Si/Si0_2 double-barrier structure,Applied Physics Letters 86・1,,,2005,,,,https://cir.nii.ac.jp/crid/1010282256851266963,