著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Theoretical Analysis of Enhancement-Mode AIGaN/GaN HEMTs,"International Meeting for Future of Electron Devices, Kansai, Tech. Dig.",,,2006,,,77-78,https://cir.nii.ac.jp/crid/1010282256917986826,