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Electronic Properties of Si- and Ge-atom Doped In Clusters; In_nSi_m and In_nGe_m

Bibliographic Information

Title
Electronic Properties of Si- and Ge-atom Doped In Clusters; In_nSi_m and In_nGe_m
Author
M.Akutsu, K.Koyasu, J.Atobe, K.Miyajima, M.Mitsui, A.Nakajima

Journal

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Details

  • CRID
    1010282256927253250
  • Article Type
    journal article
  • Data Source
    • KAKEN

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