Electronic Properties of Si- and Ge-atom Doped In Clusters; In_nSi_m and In_nGe_m
書誌事項
- タイトル
- Electronic Properties of Si- and Ge-atom Doped In Clusters; In_nSi_m and In_nGe_m
- 著者
- M.Akutsu, K.Koyasu, J.Atobe, K.Miyajima, M.Mitsui, A.Nakajima
収録刊行物
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- Journal of Physical Chemistry A 111
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Journal of Physical Chemistry A 111 573-577, 2007