著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
,Electronic Properties of Si- and Ge-atom Doped In Clusters; In_nSi_m and In_nGe_m,Journal of Physical Chemistry A 111,,,2007,,,573-577,https://cir.nii.ac.jp/crid/1010282256927253250,